On-chip integration of single solid-state quantum emitters with a SiO2 photonic platform

One important building block for future integrated nanophotonic devices is the scalable on-chip interfacing of single photon emitters and quantum memories with single optical modes. Here we present the deterministic integration of a single solid-state qubit, the nitrogen-vacancy (NV) center, with a photonic platform consisting exclusively of SiO2 grown thermally on a Si substrate. The platform stands out by its ultra-low fluorescence and the ability to produce various passive structures such as high-Q microresonators and mode-size converters. By numerical analysis an optimal structure for the efficient coupling of a dipole emitter to the guided mode could be determined. Experimentally, the integration of a preselected NV emitter was performed with an atomic force microscope and the on-chip excitation of the quantum emitter as well as the coupling of single photons to the guided mode of the integrated structure could be demonstrated. Our approach shows the potential of this platform as a robust nanoscale interface of on-chip photonic structures with solid-state qubits.European Fund for Regional Development of the European UnionBundesministerium für Bildung und Forschung https://doi.org/10.13039/501100002347Peer Reviewe

783 nm wavelength stabilized DBR tapered diode lasers with a 7 W output power

Wavelength stabilized distributed Bragg reflector (DBR) tapered diode lasers at 783 nm will be presented. The devices are based on GaAsP single quantum wells embedded in a large optical cavity leading to a vertical far field angle of about 29◦ (full width at half maximum). The 3-inch (7.62 cm) wafers are grown using metalorganic vapor phase epitaxy. In a full wafer process, 4 mm long DBR tapered lasers are manufactured. The devices consist of a 500 µm long 10th order surface DBR grating that acts as rear side mirror. After that, a 1 mm long ridge waveguide section is realized for lateral confinement, which is connected to a 2.5 mm long flared section having a full taper angle of 6◦. At an injection current of 8 A, a maximum output power of about 7 W is measured. At output powers up to 6 W, the measured emission width limited by the resolution of the spectrometer is smaller than 19 pm. Measured at 1/e2 level at this output power, the lateral beam waist width is 11.5 µm, the lateral far field angle 12.5◦, and the lateral beam parameter M2 2.5. The respective parameters measured using the second moments are 31 µm, 15.2◦, and 8.3. 70% of the emitted power is originated from the central lobe. © 2021 Optical Society of Americ

Wide Field Spectral Imaging with Shifted Excitation Raman Difference Spectroscopy Using the Nod and Shuffle Technique

Wide field Raman imaging using the integral field spectroscopy approach was used as a fast, one shot imaging method for the simultaneous collection of all spectra composing a Raman image. For the suppression of autofluorescence and background signals such as room light, shifted excitation Raman difference spectroscopy (SERDS) was applied to remove background artifacts in Raman spectra. To reduce acquisition times in wide field SERDS imaging, we adapted the nod and shuffle technique from astrophysics and implemented it into a wide field SERDS imaging setup. In our adapted version, the nod corresponds to the change in excitation wavelength, whereas the shuffle corresponds to the shifting of charges up and down on a Charge-Coupled Device (CCD) chip synchronous to the change in excitation wavelength. We coupled this improved wide field SERDS imaging setup to diode lasers with 784.4/785.5 and 457.7/458.9 nm excitation and applied it to samples such as paracetamol and aspirin tablets, polystyrene and polymethyl methacrylate beads, as well as pork meat using multiple accumulations with acquisition times in the range of 50 to 200 ms. The results tackle two main challenges of SERDS imaging: gradual photobleaching changes the autofluorescence background, and multiple readouts of CCD detector prolong the acquisition time

Wide Field Spectral Imaging with Shifted Excitation Raman Difference Spectroscopy Using the Nod and Shuffle Technique

Wide field Raman imaging using the integral field spectroscopy approach was used as a fast, one shot imaging method for the simultaneous collection of all spectra composing a Raman image. For the suppression of autofluorescence and background signals such as room light, shifted excitation Raman difference spectroscopy (SERDS) was applied to remove background artifacts in Raman spectra. To reduce acquisition times in wide field SERDS imaging, we adapted the nod and shuffle technique from astrophysics and implemented it into a wide field SERDS imaging setup. In our adapted version, the nod corresponds to the change in excitation wavelength, whereas the shuffle corresponds to the shifting of charges up and down on a Charge-Coupled Device (CCD) chip synchronous to the change in excitation wavelength. We coupled this improved wide field SERDS imaging setup to diode lasers with 784.4/785.5 and 457.7/458.9 nm excitation and applied it to samples such as paracetamol and aspirin tablets, polystyrene and polymethyl methacrylate beads, as well as pork meat using multiple accumulations with acquisition times in the range of 50 to 200 ms. The results tackle two main challenges of SERDS imaging: gradual photobleaching changes the autofluorescence background, and multiple readouts of CCD detector prolong the acquisition time.Comment: Accepted and Published by "Sensors" Journal, 19 pages, 8 figure

In vivo detection of changes in cutaneous carotenoids after chemotherapy using shifted excitation resonance Raman difference and fluorescence spectroscopy

Background: Various cutaneous toxicities under chemotherapy indicate a local effect of chemotherapy by secretion after systemic application. Here, changes in the fluorescence and Raman spectral properties of the stratum corneum subsequent to intravenous chemotherapy were assessed. Methods: Twenty healthy subjects and 20 cancer patients undergoing chemotherapy were included. Measurement time points in cancer patients were before the first cycle of chemotherapy (Tbase) and immediately after intravenous application of the chemotherapy (T1). Healthy subjects were measured once without any further intervention. Measurements were conducted using an individually manufactured system consisting of a handheld probe and a wavelength‐tunable diode laser‐based 488 nm SHG light source. Hereby, changes in both skin fluorescence and shifted excitation resonance Raman difference spectroscopy (SERRDS) carotenoid signals were assessed. Results: Healthy subjects showed significantly (P < .001) higher mean concentrations of carotenoids compared to cancer subjects at Tbase. An increase in fluorescence intensity was detected in almost all patients after chemotherapy, especially after doxorubicin infusion. Furthermore, a decrease in the carotenoid concentration in the skin after chemotherapy was found. Conclusion: The SERRDS based noninvasive detection can be used as an indirect quantitative assessment of fluorescent chemotherapeutics. The lower carotenoid SERRDS intensities at Tbase might be due to cancerous diseases and co‐medication

M2 subtype preferring dibenzodiazepinone-type muscarinic receptor ligands: effect of chemical homo-dimerization on orthosteric (and allosteric?) binding

A series of new dibenzodiazepinone-type muscarinic receptor ligands, including two homo-dimeric compounds, was prepared. Sixteen representative compounds were characterized in equilibrium binding studies with [3H]N-methylscopolamine ([3H]NMS) at the muscarinic receptor subtype M2, and seven selected compounds were additionally investigated at M1, M3, M4 and M5 with respect to receptor subtype selectivity. The side chain of the known M2 preferring muscarinic receptor antagonist DIBA was widely varied with respect to chain length and type of the basic group (amine, imidazole, guanidine and piperazine). Most of the structural changes were well tolerated with respect to muscarinic receptor binding, determined by displacement of [3H]NMS. Compounds investigated at all subtypes shared a similar selectivity profile, which can be summarized as M2 > M1 ≈ M4 > M3 ≈ M5 (46, 50, 57, 62-64) and M2 > M1 ≈ M4 > M3 > M5 (1, 58). The homo-dimeric dibenzodiazepinone derivatives UNSW-MK250 (63) and UNSW-MK262 (64) exhibited the highest M2 receptor affinities (pIC50 = 9.0 and 9.2, resp.). At the M2 receptor a steep curve slope of -2 was found for the dimeric ligand 63, which cannot be described according to the law of mass action, suggesting a more complex mechanism of binding. In addition to equilibrium binding studies, for selected ligands, we determined pEC50,diss, an estimate of affinity to the allosteric site of [3H]NMS occupied M2 receptors. Compounds 58 and 62-64 were capable of retarding [3H]NMS dissociation by a factor > 10 (Emax,diss > 92%), with highest potency (pEC50,diss = 5.56) residing in the dimeric compound 64. As the monomeric counterpart of 64 was 100 times less potent (62: pEC50,diss = 3.59), these data suggest that chemical dimerization of dibenzodiazepinone-type M receptor ligands can enhance allosteric binding

16.3 W Peak-Power Pulsed All-Diode Laser Based Multi-Wavelength Master-Oscillator Power-Amplifier System at 964 nm

An all-diode laser-based master oscillator power amplifier (MOPA) configuration for the generation of ns-pulses with high peak power, stable wavelength and small spectral line width is presented. The MOPA emits alternating at two wavelengths in the spectral range between 964 nm and 968 nm, suitable for the detection of water vapor by absorption spectroscopy. The monolithic master oscillator (MO) consists of two slightly detuned distributed feedback laser branches, whose emission is combined in a Y-coupler. The two emission wavelengths can be adjusted by varying the current or temperature to an absorption line and to a non-absorbing region. The power amplifier (PA) consists of a ridge-waveguide (RW) section and a tapered section, monolithically integrated within one chip. The RW section of the PA acts as an optical gate and converts the continuous wave input beam emitted by the MO into a sequence of short optical pulses, which are subsequently amplified by the tapered section to boost the output power. For a pulse width of 8 ns, a peak power of 16.3 W and a side mode suppression ratio of more than 37 dB are achieved at a repetition rate of 25 kHz. The measured spectral width of 10 pm, i.e., 0.1 cm−1, is limited by the resolution of the optical spectrum analyzer. The generated pulses emitting alternating at two wavelengths can be utilized in a differential absorption light detection and ranging system

Growth and Properties of Intentionally Carbon-Doped GaN Layers

Carbon-doping of GaN layers with thickness in the mm-range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi-insulating behavior with a maximum of specific resistivity of 2 × 1010 Ω cm at room temperature found for a carbon concentration of 8.8 × 1018 cm−3. For higher carbon levels up to 3.5 × 1019 cm−3, a slight increase of the conductivity is observed and related to self-compensation and passivation of the acceptor. The acceptor can be identified as CN with an electrical activation energy of 0.94 eV and partial passivation by interstitial hydrogen. In addition, two differently oriented tri-carbon defects, CN-a-CGa-a-CN and CN-a-CGa-c-CN, are identified which probably compensate about two-thirds of the carbon which is incorporated in excess of 2 × 1018 cm−3. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power

The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and experimentally. Characterization of lasers at various front facet reflections showed substantial reduction of the linewidth. This behavior is in reasonable agreement with simulation results. A minimum linewidth of 8 kHz was achieved at an output power of 85 mW with the laser featuring a front facet reflectivity of 30%. The device with a front facet reflectivity of 5% reached the same linewidth value at an output power of 290 mW